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ISEE Makes Progress in the Field of Hot Electron Transistor Research
PDF) Front cover - IEEE Electron Device Letters ( Volume: 42, Issue: 10, Oct. 2021)
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Announcing the IEEE Journal of Electron Devices Society
IIA-5 accumulation-mode GaAs MIS-like FET self-aligned by ion implantation | IEEE Journals & Magazine | IEEE Xplore
Long-Term Depression Mimicked in an IGZO-Based Synaptic Transistor
IEEE Electron Devices Society - Each month, the Editors of the IEEE Electron Device Letters select a small number of particularly remarkable articles as Editors' Picks, one of which is on the
IEEE Electron Devices Society - This month, the Cover Article for the IEEE Electron Device Letters is on 3D NOR flash with single-crystal silicon channel. Click to read, https://bit.ly/3ssMecZ Please enjoy this
Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State
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IIIB-6 "CODMOS" โ A depletion MOSFET using fixed oxide charge | IEEE Journals & Magazine | IEEE Xplore
Proper Referencing of Prior Art
PDF) Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors
Low thermal budget processing of organic dielectrics
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